Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET
- RS庫存編號:
- 214-8964
- 製造零件編號:
- AUIRL7736M2TR
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 4800 件）*
TWD281,280.00
(不含稅)
TWD295,344.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 4,800 件從 2026年1月09日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 4800 - 4800 | TWD58.60 | TWD281,280.00 |
| 9600 + | TWD56.80 | TWD272,640.00 |
* 參考價格
- RS庫存編號:
- 214-8964
- 製造零件編號:
- AUIRL7736M2TR
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 112A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 63W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.05 mm | |
| Height | 0.74mm | |
| Length | 6.35mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 112A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 63W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.05 mm | ||
Height 0.74mm | ||
Length 6.35mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.
Advanced Process Technology
Logic Level
High Power Density
相關連結
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 9-Pin DirectFET AUIRL7736M2TR
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 9-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 9-Pin DirectFET AUIRF7648M2TR
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin DirectFET