Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET

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小計(1 卷,共 4800 件)*

TWD281,280.00

(不含稅)

TWD295,344.00

(含稅)

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  • 最終 4,800 個,準備發貨
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每卷*
4800 - 4800TWD58.60TWD281,280.00
9600 +TWD56.80TWD272,640.00

* 參考價格

RS庫存編號:
214-8964
製造零件編號:
AUIRL7736M2TR
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

112A

Maximum Drain Source Voltage Vds

40V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

63W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

52nC

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.35mm

Standards/Approvals

No

Width

5.05 mm

Height

0.74mm

Automotive Standard

AEC-Q101

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology

Logic Level

High Power Density

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