Name: Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET AUIRL7736M2TR
Brand: Infineon
SKU: 214-8965
Price: 103.74 TWD
Availability: Discontinued

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	112A
	Maximum Drain Source Voltage Vds	40V
	Package Type	DirectFET
	Series	HEXFET
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	63W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	52nC
	Maximum Operating Temperature	175°C
	Height	0.74mm
	Standards/Approvals	No
	Length	6.35mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 112A
	Maximum Drain Source Voltage Vds 40V
	Package Type DirectFET
	Series HEXFET
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 63W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 52nC
	Maximum Operating Temperature 175°C
	Height 0.74mm
	Standards/Approvals No
	Length 6.35mm
	Automotive Standard AEC-Q101

Datasheet - AUIRL7736M2TR

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology

Logic Level

High Power Density

Infineon HEXFET Type N-Channel MOSFET, 112 A, 40 V Enhancement, 9-Pin DirectFET AUIRL7736M2TR

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