Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205PBF
- RS庫存編號:
- 540-9783
- Distrelec 貨號:
- 303-41-274
- 製造零件編號:
- IRF3205PBF
- 製造商:
- Infineon
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小計(1 件)*
TWD47.00
(不含稅)
TWD49.35
(含稅)
訂單超過 $1,300.00 免費送貨
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- 243 件準備從其他地點送貨
- 加上 500 件從 2026年1月06日 起發貨
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|---|---|
| 1 - 12 | TWD47.00 |
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* 參考價格
- RS庫存編號:
- 540-9783
- Distrelec 貨號:
- 303-41-274
- 製造零件編號:
- IRF3205PBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 146nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69 mm | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Distrelec Product Id | 30341274 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 146nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 4.69 mm | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Height 8.77mm | ||
Distrelec Product Id 30341274 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRF3205PBF
This HEXFET MOSFET is a high-performance power electronics component designed for demanding applications. It features an N-channel configuration with a maximum continuous drain current of 110A and a maximum drain-source voltage of 55V. The TO-220AB package ensures efficient thermal management and is suitable for use in a variety of industrial settings.
Features & Benefits
• Capable of operating at high temperatures up to +175°C
• Offers fast switching characteristics for improved performance
• Excellent avalanche rating for added durability
• Enhancement mode design provides stable operation
• Designed for ease of use in through-hole mounting
Applications
• Used for power conversion in power supplies
• Suitable for motor control
• Utilised in battery management systems
• Applied in high-frequency switching circuits
• Integrated into consumer electronics power systems
What thermal characteristics should be considered for this component?
The thermal resistance from junction-to-case is 0.75°C/W, and the case-to-sink can be as low as 0.50°C/W when applied to a flat, greased surface. This is essential for maintaining optimal performance during high-load scenarios.
How can the specifications influence overall performance?
The low on-resistance and high continuous drain current capability allow for reduced power loss and improved thermal efficiency, leading to enhanced reliability in various applications.
What methods can be applied for effective heat dissipation?
Utilising a heatsink in conjunction with the TO-220AB package can vastly improve heat dissipation during operation, ensuring that the device remains within safe thermal limits.
相關連結
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