Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205PBF

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RS庫存編號:
540-9783
Distrelec 貨號:
303-41-274
製造零件編號:
IRF3205PBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

200W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

146nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

4.69 mm

Standards/Approvals

No

Length

10.54mm

Height

8.77mm

Distrelec Product Id

30341274

Automotive Standard

No

Infineon HEXFET Series MOSFET, 110A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRF3205PBF


This HEXFET MOSFET is a high-performance power electronics component designed for demanding applications. It features an N-channel configuration with a maximum continuous drain current of 110A and a maximum drain-source voltage of 55V. The TO-220AB package ensures efficient thermal management and is suitable for use in a variety of industrial settings.

Features & Benefits


• Capable of operating at high temperatures up to +175°C

• Offers fast switching characteristics for improved performance

• Excellent avalanche rating for added durability

• Enhancement mode design provides stable operation

• Designed for ease of use in through-hole mounting

Applications


• Used for power conversion in power supplies

• Suitable for motor control

• Utilised in battery management systems

• Applied in high-frequency switching circuits

• Integrated into consumer electronics power systems

What thermal characteristics should be considered for this component?


The thermal resistance from junction-to-case is 0.75°C/W, and the case-to-sink can be as low as 0.50°C/W when applied to a flat, greased surface. This is essential for maintaining optimal performance during high-load scenarios.

How can the specifications influence overall performance?


The low on-resistance and high continuous drain current capability allow for reduced power loss and improved thermal efficiency, leading to enhanced reliability in various applications.

What methods can be applied for effective heat dissipation?


Utilising a heatsink in conjunction with the TO-220AB package can vastly improve heat dissipation during operation, ensuring that the device remains within safe thermal limits.

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