onsemi QFET Type N-Channel MOSFET, 52 A, 60 V Enhancement, 3-Pin TO-263 FQB50N06LTM
- RS庫存編號:
- 671-0902
- 製造零件編號:
- FQB50N06LTM
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
- RS庫存編號:
- 671-0902
- 製造零件編號:
- FQB50N06LTM
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | QFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 3.75W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series QFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 3.75W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
相關連結
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 FQB27P06TM
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 FQB47P06TM-AM002
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 FQB34N20LTM