onsemi Single QFET 1 Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-263 FQB4N80TM
- RS庫存編號:
- 146-2064
- 製造零件編號:
- FQB4N80TM
- 製造商:
- onsemi
可享批量折扣
小計（1 卷，共 800 件）*
TWD27,680.00
(不含稅)
TWD29,064.00
(含稅)
訂單超過 $1,300.00 免費送貨
正在逐步停售
- 最終 800 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 3200 | TWD34.60 | TWD27,680.00 |
| 4000 + | TWD33.20 | TWD26,560.00 |
* 參考價格
- RS庫存編號:
- 146-2064
- 製造零件編號:
- FQB4N80TM
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | QFET | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.13W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Height | 4.83mm | |
| Number of Elements per Chip | 1 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series QFET | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.13W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Height 4.83mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
相關連結
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 FQB27P06TM
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 FQB34P10TM
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 FQB22P10TM