Vishay Si1302DL N-Channel MOSFET, 600 mA, 30 V Enhancement, 3-Pin SC-70 SI1302DL-T1-E3
- RS庫存編號:
- 655-6795
- 製造零件編號:
- SI1302DL-T1-E3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD126.00
(不含稅)
TWD132.30
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 620 件準備從其他地點送貨
- 最終 880 件從 2026年11月10日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD12.60 | TWD126.00 |
| 750 - 1490 | TWD12.40 | TWD124.00 |
| 1500 + | TWD12.30 | TWD123.00 |
* 參考價格
- RS庫存編號:
- 655-6795
- 製造零件編號:
- SI1302DL-T1-E3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-70 | |
| Series | Si1302DL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.86nC | |
| Maximum Power Dissipation Pd | 280mW | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 800mV | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-70 | ||
Series Si1302DL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.86nC | ||
Maximum Power Dissipation Pd 280mW | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 800mV | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.2mm | ||
Width 1.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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