STMicroelectronics STW65N Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247-4 STW65N045M9-4
- RS庫存編號:
- 287-7055
- 製造零件編號:
- STW65N045M9-4
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD283.00
(不含稅)
TWD297.15
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 300 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD283.00 |
| 10 + | TWD275.00 |
* 參考價格
- RS庫存編號:
- 287-7055
- 製造零件編號:
- STW65N045M9-4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STW65N | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 312W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STW65N | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 312W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested
相關連結
- STMicroelectronics STW65N Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247-4 STW65N045M9-4
- STMicroelectronics MDmesh M9 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M9 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 STWA65N045M9
- STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247 SCTWA90N65G2V-4
- STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4
- STMicroelectronics SCTW90 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247