STMicroelectronics STW65N Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247-4 STW65N045M9-4
- RS庫存編號:
- 287-7053
- 製造零件編號:
- STW65N045M9-4
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 管，共 30 件）*
TWD8,496.00
(不含稅)
TWD8,920.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 300 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD283.20 | TWD8,496.00 |
| 60 - 60 | TWD277.50 | TWD8,325.00 |
| 90 + | TWD271.90 | TWD8,157.00 |
* 參考價格
- RS庫存編號:
- 287-7053
- 製造零件編號:
- STW65N045M9-4
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STW65N | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STW65N | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested
相關連結
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