STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247
- RS庫存編號:
- 213-3943
- 製造零件編號:
- SCTWA90N65G2V-4
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD32,736.00
(不含稅)
TWD34,372.80
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD1,091.20 | TWD32,736.00 |
| 60 + | TWD1,067.40 | TWD32,022.00 |
* 參考價格
- RS庫存編號:
- 213-3943
- 製造零件編號:
- SCTWA90N65G2V-4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTWA90N65G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 2.5V | |
| Maximum Power Dissipation Pd | 656W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Maximum Operating Temperature | 200°C | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTWA90N65G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 2.5V | ||
Maximum Power Dissipation Pd 656W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Maximum Operating Temperature 200°C | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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