STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247
- RS庫存編號:
- 233-0472
- 製造零件編號:
- SCTWA35N65G2V-4
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD15,714.00
(不含稅)
TWD16,499.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 240 件從 2026年2月02日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD523.80 | TWD15,714.00 |
| 150 + | TWD508.10 | TWD15,243.00 |
* 參考價格
- RS庫存編號:
- 233-0472
- 製造零件編號:
- SCTWA35N65G2V-4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTWA35N65G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3.3V | |
| Maximum Operating Temperature | 200°C | |
| Height | 5.1mm | |
| Length | 20.1mm | |
| Standards/Approvals | No | |
| Width | 21.1 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTWA35N65G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3.3V | ||
Maximum Operating Temperature 200°C | ||
Height 5.1mm | ||
Length 20.1mm | ||
Standards/Approvals No | ||
Width 21.1 mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency
相關連結
- STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4
- STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module 650 V Enhancement, 3-Pin Hip-247 SCTWA35N65G2V
- STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module 650 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCTW35 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCTW35 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V
- STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247 SCTWA90N65G2V-4
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 3-Pin Hip-247