STMicroelectronics SCT Type N-Channel MOSFET, 45 A, 650 V Depletion, 3-Pin Hip-247 SCTW35N65G2VAG

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包裝方式:
RS庫存編號:
202-5488
製造零件編號:
SCTW35N65G2VAG
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Series

SCT

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.055Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

240W

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.3V

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

200°C

Standards/Approvals

No

Height

34.95mm

Width

5.15 mm

Length

15.75mm

Automotive Standard

No

The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode

Low capacitance

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