Vishay SQS Type P-Channel MOSFET, 44 A, 80 V Enhancement, 8-Pin 1212-8SLW SQS181ELNW-T1_GE3
- RS庫存編號:
- 280-0033
- 製造零件編號:
- SQS181ELNW-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD240.00
(不含稅)
TWD252.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月03日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD48.00 | TWD240.00 |
| 50 - 95 | TWD39.40 | TWD197.00 |
| 100 - 245 | TWD35.00 | TWD175.00 |
| 250 - 995 | TWD34.40 | TWD172.00 |
| 1000 + | TWD33.60 | TWD168.00 |
* 參考價格
- RS庫存編號:
- 280-0033
- 製造零件編號:
- SQS181ELNW-T1_GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SQS | |
| Package Type | 1212-8SLW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0593Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 119W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | -0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SQS | ||
Package Type 1212-8SLW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0593Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 119W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf -0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
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