Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3

RS庫存編號:: 279-9962
製造零件編號:: SIRS4302DP-T1-GE3
製造商:: Vishay

Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3

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小計（1 卷，共 3000 件）*

TWD171,000.00

(不含稅)

TWD179,550.00

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單位	每單位	每卷*
3000 +	TWD57.00	TWD171,000.00

* 參考價格

RS庫存編號:: 279-9962
製造零件編號:: SIRS4302DP-T1-GE3
製造商:: Vishay

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	478A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	SIRS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.00057Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	208W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	230nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 478A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series SIRS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.00057Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 208W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 230nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5mm
	Automotive Standard No

Datasheet - SIRS4302DP-T1-GE3

Vishay SIRS Series MOSFET, 208W Maximum Power Dissipation, 30V Maximum Drain Source Voltage - SIRS4302DP-T1-GE3

This MOSFET is a high-current N-channel enhancement device designed for demanding power-switching environments. It operates over a wide temperature range and is supplied in a compact SO-8 surface-mount package suitable for integration into densely populated power assemblies. Conforming to RoHS, the component is intended for industrial-grade applications where thermal endurance and substantial continuous current handling are required.

Features and Benefits:

• Very low on-resistance 0.00057Ω for minimal conduction losses
• High continuous drain current 478A enabling heavy-load switching
• Drain-source voltage rating 30V for low-voltage power stages
• Power dissipation capability 208W to support high-power operation
• Gate charge 230nC for predictable switching behaviour
• Gate-source tolerance 20V to accommodate robust drive voltages

Applications

• Suitable for high-current DC-DC converters in server racks
• Ideal for parallel MOSFET arrangements in power modules
• Used with synchronous rectification in power supplies
• Can be used for motor-drive stages requiring high peak current
• Appropriate for industrial switching regulators operating over a wide temperature range

How does it perform under extreme ambient temperatures?

It is specified to operate from -55°C up to 150°C, supporting applications exposed to severe thermal conditions.

What mounting method is recommended for thermal management?

Surface-mount placement on a PCB with an appropriate copper area or thermal vias is required to dissipate up to 208W safely.

What gate drive considerations are needed for fast switching?

Expect a typical gate charge of 230nC

drivers must supply adequate peak current to achieve desired rise and fall times without excessive dissipation.

Is the device suited to automotive qualification programmes?

The component is not classified as automotive-grade

suitability for vehicle programmes should be assessed against specific qualification requirements.