製造零件編號

Vishay SiR Type P-Channel MOSFET, 37.1 A, 60 V Enhancement, 8-Pin SO-8 SIR5623DP-T1-RE3

RS庫存編號:: 279-9952
製造零件編號:: SIR5623DP-T1-RE3
製造商:: Vishay

Vishay SiR Type P-Channel MOSFET, 37.1 A, 60 V Enhancement, 8-Pin SO-8 SIR5623DP-T1-RE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD75,000.00

(不含稅)

TWD78,750.00

訂單超過 $1,300.00 免費送貨

有庫存

6,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 +	TWD25.00	TWD75,000.00

* 參考價格

RS庫存編號:: 279-9952
製造零件編號:: SIR5623DP-T1-RE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	37.1A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SO-8
	Series	SiR
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.024Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	33nC
	Maximum Power Dissipation Pd	59.5W
	Maximum Operating Temperature	150°C
	Length	5.15mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 37.1A
	Maximum Drain Source Voltage Vds 60V
	Package Type SO-8
	Series SiR
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.024Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 33nC
	Maximum Power Dissipation Pd 59.5W
	Maximum Operating Temperature 150°C
	Length 5.15mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIR5623DP-T1-RE3

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

Vishay SiR Type P-Channel MOSFET, 37.1 A, 60 V Enhancement, 8-Pin SO-8 SIR5623DP-T1-RE3

訂單超過 $1,300.00 免費送貨

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