Vishay SiR Type P-Channel MOSFET, 37.1 A, 60 V Enhancement, 8-Pin SO-8 SIR5623DP-T1-RE3

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TWD295.20

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TWD309.96

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240 - 996TWD61.00TWD244.00
1000 +TWD59.80TWD239.20

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包裝方式：
RS庫存編號:
279-9953
製造零件編號:
SIR5623DP-T1-RE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

37.1A

Maximum Drain Source Voltage Vds

60V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.024Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

33nC

Maximum Power Dissipation Pd

59.5W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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