Vishay SiR Type P-Channel MOSFET, 105 A, 20 V Enhancement, 8-Pin SO-8 SIR5211DP-T1-GE3
- RS庫存編號:
- 279-9949
- 製造零件編號:
- SIR5211DP-T1-GE3
- 製造商:
- Vishay
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TWD208.00
(不含稅)
TWD218.40
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD41.60 | TWD208.00 |
| 50 - 95 | TWD31.20 | TWD156.00 |
| 100 - 245 | TWD27.80 | TWD139.00 |
| 250 - 995 | TWD27.00 | TWD135.00 |
| 1000 + | TWD26.60 | TWD133.00 |
* 參考價格
- RS庫存編號:
- 279-9949
- 製造零件編號:
- SIR5211DP-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 105A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0062Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 56.8W | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 105A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0062Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 56.8W | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Fully lead (Pb)-free device
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