Vishay SIHF Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3
- RS庫存編號:
- 279-9907
- 製造零件編號:
- SIHF074N65E-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 件）*
TWD261.00
(不含稅)
TWD274.05
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 996 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD261.00 |
| 10 - 24 | TWD256.00 |
| 25 - 99 | TWD251.00 |
| 100 + | TWD247.00 |
* 參考價格
- RS庫存編號:
- 279-9907
- 製造零件編號:
- SIHF074N65E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.079Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.079Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHF Series MOSFET, 650V Drain Source Voltage, 14A Continuous Drain Current - SIHF074N65E-GE3
This MOSFET is a high-voltage switching transistor designed for power conversion and control in industrial electronics. It operates as an N-channel enhancement device in a through-hole TO-220 package, providing a practical choice for repairable assemblies and prototyping where robust voltage handling and straightforward mounting are needed.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching applications • 14A continuous drain current supports sustained load handling • 0.079Ω Rds(on) reduces conduction losses under load • 8nC typical gate charge gives predictable switching behaviour • 30V maximum gate-source rating allows wide gate drive margins • 39W power dissipation capability manages thermal stress during operation
Applications
• Suitable for high-voltage switch-mode power supplies • Ideal for industrial motor drive front ends • Used for power-factor-correction stages in converters • Can be used for inverter and welding power electronics • Suitable for laboratory prototyping and through-hole repairs
What temperature range can it withstand during operation?
It is specified to operate down to -55°C and up to 150°C maximum junction temperature for high-temperature environments.
How many mounting pins and what package does it use?
It is supplied in a TO-220 through-hole package with three pins for straightforward PCB or heatsink attachment.
What typical dynamic characteristic affects switching losses?
The typical gate charge is 8nC at the rated gate drive, which influences switching transition energy and driver sizing.
Is it suitable for automotive qualifying processes?
It is not designated as an automotive-standard part and therefore should not be used where automotive-grade certification is required.
相關連結
- Vishay SIHF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3
- Vishay SIHF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHF080N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHA690N60E-GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHP105N60EF-GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHP125N60EF-GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHP186N60EF-GE3