Infineon IPW MOSFET, 13 A, 650 V, 3-Pin PG-TO-247 IPW60R105CFD7XKSA1
- RS庫存編號:
- 273-7472
- 製造零件編號:
- IPW60R105CFD7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD2,760.00
(不含稅)
TWD2,898.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 240 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 90 | TWD92.00 | TWD2,760.00 |
| 120 + | TWD89.20 | TWD2,676.00 |
* 參考價格
- RS庫存編號:
- 273-7472
- 製造零件編號:
- IPW60R105CFD7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 106W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 106W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon MOSFET has highest efficiency with outstanding ease of use. This MOSFET has an excellent hard commutation ruggedness and highest reliability for resonant topologies. It is suitable for soft switching topologies.
Low gate charge
Ultra fast body diode
Best in class reverse recovery charge
Enabling increased power density solution
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