Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247
- RS庫存編號:
- 258-3910
- 製造零件編號:
- IPW65R029CFD7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD7,113.00
(不含稅)
TWD7,468.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月01日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD237.10 | TWD7,113.00 |
| 60 - 60 | TWD232.30 | TWD6,969.00 |
| 90 + | TWD227.70 | TWD6,831.00 |
* 參考價格
- RS庫存編號:
- 258-3910
- 製造零件編號:
- IPW65R029CFD7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 305W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 305W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
650V breakdown voltage
Significantly reduced switching losses compared to competition
Lowest RDS(on) dependency over temperature
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
相關連結
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1
- Infineon IPW MOSFET 650 V PG-TO-247
- Infineon IPW MOSFET 650 V PG-TO-247 IPW65R050CFD7AXKSA1
- Infineon IPW MOSFET 650 V, 3-Pin PG-TO-247
- Infineon IPW MOSFET 650 V, 3-Pin PG-TO-247 IPW60R105CFD7XKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1