Infineon IPW Type N-Channel MOSFET, 21 A, 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1
- RS庫存編號:
- 273-3027
- 製造零件編號:
- IPW65R115CFD7AXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD3,111.00
(不含稅)
TWD3,266.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 150 件從 2026年6月08日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD103.70 | TWD3,111.00 |
| 60 + | TWD100.60 | TWD3,018.00 |
* 參考價格
- RS庫存編號:
- 273-3027
- 製造零件編號:
- IPW65R115CFD7AXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPW | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 115mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 114W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AECQ101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPW | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 115mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 114W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AECQ101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon automotive SJ power MOSFET is in TO-247 package is part of the automotive qualified 650V cool MOS SJ power MOSFET CFD7A product family.
Enabling of higher power density designs
Scalable as designed for use in PFC and DC-DC stage
Granular portfolio available
相關連結
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW MOSFET 650 V PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW MOSFET 650 V PG-TO-247 IPW65R050CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R099CFD7AXKSA1
- Infineon IPW MOSFET 650 V, 3-Pin PG-TO-247
- Infineon IPW MOSFET 650 V, 3-Pin PG-TO-247 IPW60R105CFD7XKSA1
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247