Infineon IPW Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin PG-TO-247
- RS庫存編號:
- 273-3026
- 製造零件編號:
- IPW65R099CFD7AXKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 件)*
TWD218.00
(不含稅)
TWD228.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 238 件從 2026年1月05日 起裝運發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 4 | TWD218.00 |
| 5 - 9 | TWD214.00 |
| 10 - 24 | TWD198.00 |
| 25 - 49 | TWD182.00 |
| 50 + | TWD168.00 |
* 參考價格
- RS庫存編號:
- 273-3026
- 製造零件編號:
- IPW65R099CFD7AXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPW | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 127W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, AECQ101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPW | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 127W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, AECQ101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V cool MOS N-channel automotive SJ power MOSFET in TO-247 package. It has highest reliability in the field meeting automotive lifetime requirements.
Enabling of higher power density designs
Granular portfolio available
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- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247
