Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3
- RS庫存編號:
- 273-2998
- 製造零件編號:
- IPB057N06NATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD260.00
(不含稅)
TWD273.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 950 件從 2026年1月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD52.00 | TWD260.00 |
| 50 - 95 | TWD48.40 | TWD242.00 |
| 100 - 245 | TWD42.60 | TWD213.00 |
| 250 - 495 | TWD41.20 | TWD206.00 |
| 500 + | TWD36.40 | TWD182.00 |
* 參考價格
- RS庫存編號:
- 273-2998
- 製造零件編號:
- IPB057N06NATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO263-3 | |
| Series | IPB057N06N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -5°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 175°C | |
| Width | 40 mm | |
| Height | 1.5mm | |
| Length | 40mm | |
| Standards/Approvals | JEDEC 1, IEC61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO263-3 | ||
Series IPB057N06N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -5°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 175°C | ||
Width 40 mm | ||
Height 1.5mm | ||
Length 40mm | ||
Standards/Approvals JEDEC 1, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
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