Infineon StrongIRFET N channel-Channel Power MOSFET, 122 A, 30 V Enhancement, 3-Pin PG-TO263-3 IPB020N03LF2SATMA1
- RS庫存編號:
- 762-989
- 製造零件編號:
- IPB020N03LF2SATMA1
- 製造商:
- Infineon
N
可享批量折扣
小計（1 件）*
TWD64.00
(不含稅)
TWD67.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 800 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD64.00 |
| 10 - 24 | TWD53.00 |
| 25 - 99 | TWD34.00 |
| 100 - 499 | TWD33.00 |
| 500 + | TWD32.00 |
* 參考價格
- RS庫存編號:
- 762-989
- 製造零件編號:
- IPB020N03LF2SATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 122A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TO263-3 | |
| Series | StrongIRFET | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.05mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | RoHS | |
| Length | 15.88mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 122A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TO263-3 | ||
Series StrongIRFET | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.05mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals RoHS | ||
Length 15.88mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 Power Transistor is a 30V N-channel MOSFET suitable for various applications. It operates in extreme conditions, with a maximum temperature rating of 175°C and conforms to environmental regulations.
100% avalanche tested
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
相關連結
- Infineon StrongIRFET N channel-Channel Power MOSFET 30 V Enhancement, 3-Pin PG-TO263-3 IPB023N03LF2SATMA1
- Infineon StrongIRFET N channel-Channel Power MOSFET 30 V Enhancement, 3-Pin PG-TO263-3 IPB018N03LF2SATMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon IPB057N06N Type N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R115CFD7AATMA1
- Infineon IPB057N06N Type N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO263-3 IPB057N06NATMA1