Infineon OptiMOS-TM6 Type N-Channel MOSFET, 134 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1

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RS庫存編號:
349-400
製造零件編號:
IPB068N20NM6ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

134A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS-TM6

Package Type

PG-TO263-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

73nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, DIN IEC 68-1: 55/175/56, IEC61249-2-21

Automotive Standard

No

COO (Country of Origin):
MY

Infineon OptiMOS-TM6 Series MOSFET, 300W Maximum Power Dissipation, 200V Maximum Drain Source Voltage - IPB068N20NM6ATMA1


This n-channel enhancement MOSFET is a high-current switching device designed for power-management applications requiring low conduction losses and robust thermal performance. It operates as a surface-mounted transistor in a PG-TO263-3 package, suitable for circuits where compact, high-power switching is needed across a wide temperature range.

Features and Benefits:


• 200V drain-source rating enables high-voltage switching capability
• 6.8mΩ low Rds(on) reduces conduction losses at high currents
• 134A continuous drain current supports heavy-current applications
• 300W power dissipation allows sustained thermal loading
• 73nC typical gate charge provides faster gate transitions
• -55 to 175°C operating range endures harsh temperature environments

Applications


• Suitable for synchronous rectification in power supplies
• Ideal for DC-DC converters in high-voltage rails
• Used with motor drivers requiring high continuous current
• Can be used for load switches in industrial power systems
• Suitable for high-temperature power-management modules

What mounting method is required for reliable thermal contact?


The device is designed for surface mounting

the PG-TO263-3 package permits soldered PCB attachment with a large thermal pad to aid heat transfer to the board and heatsinking arrangements.

How does the gate-drive requirement affect switching design?


The maximum gate-source voltage is 20V and the typical gate charge is 73nC, so gate-driver selection should provide sufficient current to achieve the desired switching speed while respecting Vgs limits.

What environmental conditions can it withstand?


It conforms to specified standards including RoHS and specified IEC temperature/humidity stress levels, and is rated to operate from -55°C up to 175°C for use in demanding thermal environments.

What electrical limits protect against over-stress?


The device’s maximum drain-source voltage is 200V and its continuous drain current rating is 134A

designs should include appropriate current limiting and transient protection to avoid exceeding these parameters.

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