Infineon OptiMOS-TM6 Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
- RS庫存編號:
- 349-401
- 製造零件編號:
- IPB339N20NM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD655.00
(不含稅)
TWD687.75
(含稅)
訂單超過 $1,300.00 免費送貨
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- 1,000 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD131.00 | TWD655.00 |
| 50 - 95 | TWD124.40 | TWD622.00 |
| 100 + | TWD115.40 | TWD577.00 |
* 參考價格
- RS庫存編號:
- 349-401
- 製造零件編號:
- IPB339N20NM6ATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 39A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS-TM6 | |
| Package Type | PG-TO263-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15.9nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 39A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS-TM6 | ||
Package Type PG-TO263-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15.9nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It offers very low on resistance (RDS(on)), ensuring minimal conduction losses. With an excellent gate charge x RDS(on) product (FOM), it delivers superior switching performance. This MOSFET also features very low reverse recovery charge (Qrr), enhancing overall efficiency.
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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