Infineon OptiMOS 5 Type N-Channel MOSFET, 87 A, 60 V Enhancement, 3-Pin PG-TO-220 FullPAK
- RS庫存編號:
- 273-2996
- 製造零件編號:
- IPA029N06NM5SXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD165.00
(不含稅)
TWD173.24
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 480 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD82.50 | TWD165.00 |
| 10 - 18 | TWD74.50 | TWD149.00 |
| 20 - 24 | TWD73.50 | TWD147.00 |
| 26 - 48 | TWD68.50 | TWD137.00 |
| 50 + | TWD63.00 | TWD126.00 |
* 參考價格
- RS庫存編號:
- 273-2996
- 製造零件編號:
- IPA029N06NM5SXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO-220 FullPAK | |
| Series | OptiMOS 5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO-220 FullPAK | ||
Series OptiMOS 5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET in TO-220 fullPAK package features increased power density, improved efficiency with low RDS and lower system costs. The TO-220 FullPAK package portfolio of power MOSFETs presents a perfect solution for synchronous rectification.
Less paralleling required
Low voltage overshoot
Less heat generation
相關連結
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO-220 FullPAK IPA029N06NM5SXKSA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin PG-TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin PG-TO-220 IPA600N25NM3SXKSA1
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-220 FullPAK SIHF110N65SF-GE3
- Infineon OptiMOS 7 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8-53 IAUCN10S7N021ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3