Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- RS庫存編號:
- 284-767
- 製造零件編號:
- IQE046N08LM5SCATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
小計(1 卷,共 6000 件)*
TWD386,400.00
(不含稅)
TWD405,720.00
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每卷* |
|---|---|---|
| 6000 + | TWD64.40 | TWD386,400.00 |
* 參考價格
- RS庫存編號:
- 284-767
- 製造零件編號:
- IQE046N08LM5SCATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-WHSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-WHSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is designed to deliver exceptional performance and reliability in high efficiency applications. Built for synchronous rectification in switch mode power supplies, this innovative MOSFET integrates Advanced thermal management features to ensure superior heat dissipation. Leveraging a logic level N channel configuration with extremely low on resistance, it guarantees efficient operation even at elevated temperatures. This component meets stringent industry standards while offering robust avalanche protection, making it a prime choice for industrial applications requiring high current handling and environmental toughness.
Optimised for high performance switching
Low on resistance enhances energy efficiency
Robust thermal performance for longevity
Avalanche tested for reliability
Pb free lead plating meets RoHS standards
Halogen free for eco friendly compliance
Ideal for stringent industrial applications
Compact package for easy integration
相關連結
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1
