Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1

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TWD386,400.00

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TWD405,720.00

(含稅)

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RS庫存編號:
284-767
製造零件編號:
IQE046N08LM5SCATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

PG-WHSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC, RoHS

Automotive Standard

No

The Infineon MOSFET features an OptiMOS 5 Power Transistor is designed to deliver exceptional performance and reliability in high efficiency applications. Built for synchronous rectification in switch mode power supplies, this innovative MOSFET integrates Advanced thermal management features to ensure superior heat dissipation. Leveraging a logic level N channel configuration with extremely low on resistance, it guarantees efficient operation even at elevated temperatures. This component meets stringent industry standards while offering robust avalanche protection, making it a prime choice for industrial applications requiring high current handling and environmental toughness.

Optimised for high performance switching

Low on resistance enhances energy efficiency

Robust thermal performance for longevity

Avalanche tested for reliability

Pb free lead plating meets RoHS standards

Halogen free for eco friendly compliance

Ideal for stringent industrial applications

Compact package for easy integration

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