Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- RS庫存編號:
- 284-773
- 製造零件編號:
- IQE050N08NM5SCATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 6000 件）*
TWD385,800.00
(不含稅)
TWD405,120.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 6000 + | TWD64.30 | TWD385,800.00 |
* 參考價格
- RS庫存編號:
- 284-773
- 製造零件編號:
- IQE050N08NM5SCATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-WHSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-WHSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor, rated at 80V, is specifically designed to enhance the efficiency and performance of modern electronic applications. It excels in providing superior synchronous rectification, ensuring minimal energy losses and maximising overall system reliability. Thanks to its low on resistance and exceptional thermal management, this transistor is Ideal for demanding industrial applications, making it a preferred choice for engineers aiming for performance optimisation. With extensive avalanche testing and robust construction, it promises longevity in severe environments and aligns with global RoHS standards, ensuring a strong commitment to safety and sustainability.
Optimised for synchronous rectification
N channel for easy circuit integration
Low on resistance reduces heat generation
Exceptional thermal resistance prevents overheating
100% avalanche tested for reliability
Pb free lead plating for eco friendly manufacturing
Halogen free construction meets regulations
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