Infineon OptiMOS 3 Type N-Channel MOSFET, 15 A, 250 V Enhancement, 3-Pin PG-TO-220 IPA600N25NM3SXKSA1
- RS庫存編號:
- 273-7456
- 製造零件編號:
- IPA600N25NM3SXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD2,370.00
(不含稅)
TWD2,488.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 450 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD47.40 | TWD2,370.00 |
| 100 + | TWD43.50 | TWD2,175.00 |
* 參考價格
- RS庫存編號:
- 273-7456
- 製造零件編號:
- IPA600N25NM3SXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | OptiMOS 3 | |
| Package Type | PG-TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series OptiMOS 3 | ||
Package Type PG-TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is ideal for high frequency switching and synchronous rectification. This MOSFET is 100 percent avalanche tested and qualified according to JEDEC standard. It is a N channel MOSFET and halogen free according to IEC61249 2 21.
Pb free lead plating
RoHS compliant
Excellent gate charge
Very low on resistance
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