Infineon SPD18P06P G Type P-Channel MOSFET, -18.6 A, 60 V Enhancement, 3-Pin PG-TO252-3 SPD18P06PGBTMA1
- RS庫存編號:
- 273-2831
- 製造零件編號:
- SPD18P06PGBTMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 2500 件）*
TWD49,250.00
(不含稅)
TWD51,700.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 + | TWD19.70 | TWD49,250.00 |
* 參考價格
- RS庫存編號:
- 273-2831
- 製造零件編號:
- SPD18P06PGBTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -18.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO252-3 | |
| Series | SPD18P06P G | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 1.33V | |
| Maximum Power Dissipation Pd | 80W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 40mm | |
| Standards/Approvals | IEC 68-1, RoHS, AEC Q101 | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -18.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO252-3 | ||
Series SPD18P06P G | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 1.33V | ||
Maximum Power Dissipation Pd 80W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 40mm | ||
Standards/Approvals IEC 68-1, RoHS, AEC Q101 | ||
Height 1.5mm | ||
Width 40 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel, enhancement mode MOSFET. It has 175 degree Celsius operating temperature. This MOSFET is qualified according to AEC Q101 standard.
RoHS compliant
Avalanche rated
Pb free lead plating
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