Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3
- RS庫存編號:
- 268-8313
- 製造零件編號:
- SIHK125N60EF-T1GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 268-8313
- 製造零件編號:
- SIHK125N60EF-T1GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.125Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 132W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.125Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 132W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 150°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHK125N60EF-T1GE3
This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and control on printed circuit boards. It operates across a wide thermal range and is intended for applications requiring robust voltage handling and moderate current capacity in a PCB-mounted PowerPAK package.
Features and Benefits:
• 650V drain capability for high-voltage switching
• 21A continuous drain current for steady power delivery
• 0.125Ω low Rds(on) to reduce conduction losses
• 132W power dissipation for thermal headroom
• 45nC typical gate charge for predictable switching energy
• 30V gate-source rating for flexible gate drive levels
• 21A continuous drain current for steady power delivery
• 0.125Ω low Rds(on) to reduce conduction losses
• 132W power dissipation for thermal headroom
• 45nC typical gate charge for predictable switching energy
• 30V gate-source rating for flexible gate drive levels
Applications
• Suitable for switch-mode power supplies in industrial equipment
• Ideal for high-voltage motor-drive front ends
• Used with isolated gate drivers in power converters
• Can be used for power-factor-correction stages
• Suitable for inverter circuits in renewable-energy systems
• Ideal for high-voltage motor-drive front ends
• Used with isolated gate drivers in power converters
• Can be used for power-factor-correction stages
• Suitable for inverter circuits in renewable-energy systems
What package is provided for PCB assembly and thermal management?
The component is supplied in a PowerPAK 10x12 surface-mount package designed for PCB mounting to assist heat transfer to the board and facilitate solder-based thermal paths.
What thermal extremes can the device withstand in operation?
It is specified to function from -55°C up to 150°C, enabling use in environments with substantial temperature variation.
How does the device behave as a gate-driven switch?
It is an enhancement-mode N-channel MOSFET that requires a positive gate-source voltage up to its 30V limit to conduct, and its typical gate charge of 45nC informs switching-energy calculations.
Are there any environmental or regulatory attributes noted?
The device complies with RoHS requirements for restricted substances, aligning with standard electronic component environmental directives.
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