製造零件編號

ROHM R6013VND3 NaN Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252

RS庫存編號:: 265-5414
製造零件編號:: R6013VND3TL1
製造商:: ROHM

ROHM R6013VND3 NaN Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD97,250.00

(不含稅)

TWD102,100.00

訂單超過 $1,300.00 免費送貨

庫存資訊目前無法查詢

單位	每單位	每卷*
2500 - 2500	TWD38.90	TWD97,250.00
5000 +	TWD38.20	TWD95,500.00

* 參考價格

RS庫存編號:: 265-5414
製造零件編號:: R6013VND3TL1
製造商:: ROHM

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	R6013VND3 NaN
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.3Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	131W
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS NaN
	Automotive Standard	No

	選取全部
	品牌 ROHM
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series R6013VND3 NaN
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.3Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 131W
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS NaN
	Automotive Standard No

Datasheet - R6013VND3TL1

The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.

Fast reverse recovery time (trr)

Low on resistance

Fast switching speed

Drive circuits can be simple

ROHM R6013VND3 NaN Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252

訂單超過 $1,300.00 免費送貨

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