ROHM RD3P130SP Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 RD3P130SPTL1
- RS庫存編號:
- 172-0398
- 製造零件編號:
- RD3P130SPTL1
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD62,750.00
(不含稅)
TWD65,900.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 5,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD25.10 | TWD62,750.00 |
| 5000 - 5000 | TWD24.40 | TWD61,000.00 |
| 7500 + | TWD23.60 | TWD59,000.00 |
* 參考價格
- RS庫存編號:
- 172-0398
- 製造零件編號:
- RD3P130SPTL1
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | RD3P130SP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.4 mm | |
| Height | 2.3mm | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Length | 6.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series RD3P130SP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.4 mm | ||
Height 2.3mm | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Length 6.8mm | ||
Automotive Standard No | ||
RD3P130SP is a Power MOSFET with Low on - resistance, suitable for Switching.
Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
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