ROHM RD3H160SP Type P-Channel MOSFET, 16 A, 45 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 264-3806
- 製造零件編號:
- RD3H160SPTL1
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD51,500.00
(不含稅)
TWD54,075.00
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD20.60 | TWD51,500.00 |
| 5000 - 7500 | TWD19.90 | TWD49,750.00 |
| 10000 + | TWD19.30 | TWD48,250.00 |
* 參考價格
- RS庫存編號:
- 264-3806
- 製造零件編號:
- RD3H160SPTL1
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Package Type | TO-252 | |
| Series | RD3H160SP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 20W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.8mm | |
| Width | 6.4 mm | |
| Height | 2.3mm | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 45V | ||
Package Type TO-252 | ||
Series RD3H160SP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 20W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.8mm | ||
Width 6.4 mm | ||
Height 2.3mm | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ROHM power MOSFET with low on resistance, suitable for switching, it is drive circuits can be simple and Pb-free plating and RoHS compliant.
Fast switching speed
Parallel use is easy
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