ROHM R6004END3 Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 R6004END3TL1
- RS庫存編號:
- 264-3776
- 製造零件編號:
- R6004END3TL1
- 製造商:
- ROHM
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查看批量定價選項小計（1 包，共 5 件）*
TWD418.00
(不含稅)
TWD438.90
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,495 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD83.60 | TWD418.00 |
| 50 - 95 | TWD72.20 | TWD361.00 |
| 100 - 245 | TWD58.40 | TWD292.00 |
| 250 - 995 | TWD57.40 | TWD287.00 |
| 1000 + | TWD41.20 | TWD206.00 |
* 參考價格
- RS庫存編號:
- 264-3776
- 製造零件編號:
- R6004END3TL1
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | R6004END3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.98Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 59W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series R6004END3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.98Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 59W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ROHM low-noise power MOSFET is suitable for switching power supply, it is low on-resistance, low radiation noise and Pb-free plating and RoHS compliant.
Fast switching
Parallel use is easy
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