製造零件編號

ROHM R6004END3 Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252

RS庫存編號:: 264-3775
製造零件編號:: R6004END3TL1
製造商:: ROHM

ROHM R6004END3 Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD46,500.00

(不含稅)

TWD48,825.00

訂單超過 $1,300.00 免費送貨

庫存資訊目前無法查詢

單位	每單位	每卷*
2500 - 2500	TWD18.60	TWD46,500.00
5000 - 7500	TWD18.10	TWD45,250.00
10000 +	TWD17.70	TWD44,250.00

* 參考價格

RS庫存編號:: 264-3775
製造零件編號:: R6004END3TL1
製造商:: ROHM

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	R6004END3
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.98Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	59W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 ROHM
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series R6004END3
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.98Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 59W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - R6004END3TL1

COO (Country of Origin):: CN

The ROHM low-noise power MOSFET is suitable for switching power supply, it is low on-resistance, low radiation noise and Pb-free plating and RoHS compliant.

Fast switching

Parallel use is easy

ROHM R6004END3 Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252

訂單超過 $1,300.00 免費送貨

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