Infineon IPD Type N-Channel MOSFET, 207 A, 600 V N HDSOP IPDQ60R040S7XTMA1
- RS庫存編號:
- 260-1202
- 製造零件編號:
- IPDQ60R040S7XTMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 件)*
TWD197.00
(不含稅)
TWD206.85
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 750 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD197.00 |
| 10 - 99 | TWD188.00 |
| 100 - 249 | TWD178.00 |
| 250 - 499 | TWD170.00 |
| 500 + | TWD161.00 |
* 參考價格
- RS庫存編號:
- 260-1202
- 製造零件編號:
- IPDQ60R040S7XTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 207A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 272W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.1mm | |
| Width | 15.5 mm | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 207A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 272W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.1mm | ||
Width 15.5 mm | ||
Height 2.35mm | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
相關連結
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP IPDQ60R022S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP IPDQ60R065S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N, 10-Pin HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N, 10-Pin HDSOP IPDD60R125G7XTMA1
- Infineon IPD Type P-Channel MOSFET, 61 A N HDSOP
