Infineon IPD Type N-Channel MOSFET, 20 A, 600 V N, 10-Pin HDSOP

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 卷,共 1700 件)*

TWD107,780.00

(不含稅)

TWD113,169.00

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看
單位
每單位
每卷*
1700 - 1700TWD63.40TWD107,780.00
3400 +TWD62.10TWD105,570.00

* 參考價格

RS庫存編號:
258-3874
製造零件編號:
IPDD60R125G7XTMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

HDSOP

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

N

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

120W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

27nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon Double DPAK, the first top-side cooled surface mount device package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS G7 super junction MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Innovative top-side cooling concept

Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance

Enables higher power density solutions

Exceeding the highest quality standards

相關連結