Infineon IPD Type N-Channel MOSFET, 20 A, 600 V N, 10-Pin HDSOP
- RS庫存編號:
- 258-3874
- 製造零件編號:
- IPDD60R125G7XTMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 1700 件)*
TWD107,780.00
(不含稅)
TWD113,169.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 1700 - 1700 | TWD63.40 | TWD107,780.00 |
| 3400 + | TWD62.10 | TWD105,570.00 |
* 參考價格
- RS庫存編號:
- 258-3874
- 製造零件編號:
- IPDD60R125G7XTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 120W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 120W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon Double DPAK, the first top-side cooled surface mount device package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS G7 super junction MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Innovative top-side cooling concept
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
Enables higher power density solutions
Exceeding the highest quality standards
相關連結
- Infineon IPD Type N-Channel MOSFET 600 V N, 10-Pin HDSOP IPDD60R125G7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP IPDQ60R022S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP IPDQ60R040S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP IPDQ60R065S7XTMA1
- Infineon IPD Type P-Channel MOSFET, 61 A N HDSOP
