Infineon IPD Type N-Channel MOSFET, 375 A, 600 V N HDSOP IPDQ60R022S7XTMA1
- RS庫存編號:
- 260-1200
- 製造零件編號:
- IPDQ60R022S7XTMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 件）*
TWD314.00
(不含稅)
TWD329.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 750 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD314.00 |
| 10 - 99 | TWD299.00 |
| 100 - 249 | TWD283.00 |
| 250 - 499 | TWD269.00 |
| 500 + | TWD256.00 |
* 參考價格
- RS庫存編號:
- 260-1200
- 製造零件編號:
- IPDQ60R022S7XTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Power Dissipation Pd | 416W | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Power Dissipation Pd 416W | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
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