Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 8-Pin HSOG IPTG063N15NM5ATMA1
- RS庫存編號:
- 259-2740
- 製造零件編號:
- IPTG063N15NM5ATMA1
- 製造商:
- Infineon
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| 1 - 9 | TWD172.00 |
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* 參考價格
- RS庫存編號:
- 259-2740
- 製造零件編號:
- IPTG063N15NM5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 122A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | HSOG | |
| Series | IPT | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Forward Voltage Vf | 0.84V | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Width | 8.75 mm | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 122A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type HSOG | ||
Series IPT | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.3mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Forward Voltage Vf 0.84V | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Width 8.75 mm | ||
Length 10.1mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.
N-channel, normal level
Very low on-resistance RDS(on)
Superior thermal resistance
100% avalanche tested
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-22
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