Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG
- RS庫存編號:
- 259-2737
- 製造零件編號:
- IPTG054N15NM5ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 1800 件）*
TWD173,340.00
(不含稅)
TWD182,016.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,800 件從 2026年6月08日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1800 - 1800 | TWD96.30 | TWD173,340.00 |
| 3600 + | TWD94.40 | TWD169,920.00 |
* 參考價格
- RS庫存編號:
- 259-2737
- 製造零件編號:
- IPTG054N15NM5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 143A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | IPT | |
| Package Type | HSOG | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 55.4mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Forward Voltage Vf | 0.83V | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Width | 8.75 mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 143A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series IPT | ||
Package Type HSOG | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 55.4mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Forward Voltage Vf 0.83V | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Width 8.75 mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.
N-channel, normal level
Very low on-resistance RDS(on)
Superior thermal resistance
100% avalanche tested
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
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