Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 8-Pin HSOG

RS庫存編號:: 259-2739
製造零件編號:: IPTG063N15NM5ATMA1
製造商:: Infineon

Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 8-Pin HSOG

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 1800 件）*

TWD145,980.00

(不含稅)

TWD153,288.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月09日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1800 - 1800	TWD81.10	TWD145,980.00
3600 +	TWD78.60	TWD141,480.00

* 參考價格

RS庫存編號:: 259-2739
製造零件編號:: IPTG063N15NM5ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	122A
	Maximum Drain Source Voltage Vds	150V
	Package Type	HSOG
	Series	IPT
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.3mΩ
	Maximum Power Dissipation Pd	214W
	Typical Gate Charge Qg @ Vgs	50nC
	Forward Voltage Vf	0.84V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC 61249-2-21
	Length	10.1mm
	Height	2.4mm
	Width	8.75 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 122A
	Maximum Drain Source Voltage Vds 150V
	Package Type HSOG
	Series IPT
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.3mΩ
	Maximum Power Dissipation Pd 214W
	Typical Gate Charge Qg @ Vgs 50nC
	Forward Voltage Vf 0.84V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC 61249-2-21
	Length 10.1mm
	Height 2.4mm
	Width 8.75 mm
	Automotive Standard No

Datasheet - IPTG063N15NM5ATMA1

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-22

Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 8-Pin HSOG

訂單超過 $1,300.00 免費送貨

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