Infineon iPB Type N-Channel MOSFET, 170 A, 80 V P TO-263

RS庫存編號:: 259-2574
製造零件編號:: IPB019N08NF2SATMA1
製造商:: Infineon

Infineon iPB Type N-Channel MOSFET, 170 A, 80 V P TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 800 件）*

TWD42,000.00

(不含稅)

TWD44,096.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月02日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
800 - 800	TWD52.50	TWD42,000.00
1600 +	TWD51.50	TWD41,200.00

* 參考價格

RS庫存編號:: 259-2574
製造零件編號:: IPB019N08NF2SATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	170A
	Maximum Drain Source Voltage Vds	80V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Channel Mode	P
	Forward Voltage Vf	1.2V
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 170A
	Maximum Drain Source Voltage Vds 80V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Channel Mode P
	Forward Voltage Vf 1.2V
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB019N08NF2SATMA1

The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.

Broad availability from distribution partners

Excellent price/performance ratio

Ideal for high and low switching frequencies

Industry standard footprint through-hole package

High current rating

Infineon iPB Type N-Channel MOSFET, 170 A, 80 V P TO-263

訂單超過 $1,300.00 免費送貨

相關連結