製造零件編號

Infineon iPB Type N-Channel MOSFET, 260 A, 80 V P, 7-Pin TO-263

RS庫存編號:: 258-3783
製造零件編號:: IPB015N08N5ATMA1
製造商:: Infineon

Infineon iPB Type N-Channel MOSFET, 260 A, 80 V P, 7-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 1000 件）*

TWD124,000.00

(不含稅)

TWD130,200.00

訂單超過 $1,300.00 免費送貨

有庫存

1,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
1000 - 1000	TWD124.00	TWD124,000.00
2000 +	TWD120.30	TWD120,300.00

* 參考價格

RS庫存編號:: 258-3783
製造零件編號:: IPB015N08N5ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	260A
	Maximum Drain Source Voltage Vds	80V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.5mΩ
	Channel Mode	P
	Typical Gate Charge Qg @ Vgs	178nC
	Forward Voltage Vf	0.86V
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 260A
	Maximum Drain Source Voltage Vds 80V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.5mΩ
	Channel Mode P
	Typical Gate Charge Qg @ Vgs 178nC
	Forward Voltage Vf 0.86V
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - IPB015N08N5ATMA1

The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

Infineon iPB Type N-Channel MOSFET, 260 A, 80 V P, 7-Pin TO-263

訂單超過 $1,300.00 免費送貨

相關連結