Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263 IPB80P04P4L06ATMA2
- RS庫存編號:
- 258-3820
- 製造零件編號:
- IPB80P04P4L06ATMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD81.00
(不含稅)
TWD85.04
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 74 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD40.50 | TWD81.00 |
| 10 - 98 | TWD39.00 | TWD78.00 |
| 100 - 248 | TWD36.00 | TWD72.00 |
| 250 - 498 | TWD35.50 | TWD71.00 |
| 500 + | TWD35.00 | TWD70.00 |
* 參考價格
- RS庫存編號:
- 258-3820
- 製造零件編號:
- IPB80P04P4L06ATMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 40.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 40.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is P-channel logic level enhancement mode. It has 175°C operating temperature.
AEC qualified
MSL1 up to 260°C peak reflow
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