Infineon CoolMOS^TM Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin PG-TO220-3
- RS庫存編號:
- 259-1574
- 製造零件編號:
- SPP06N80C3XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 管，共 50 件）*
TWD1,465.00
(不含稅)
TWD1,538.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 300 件從 2026年1月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 + | TWD29.30 | TWD1,465.00 |
* 參考價格
- RS庫存編號:
- 259-1574
- 製造零件編號:
- SPP06N80C3XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS^TM | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.9Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS^TM | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.9Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon coolmostm power transistor it is switching application this is industrial application with high DC bulk voltage. It is qualified according to JEDEC1 for target applications.
Extreme dv/dt rated
High peak current capability
Ultra low gate charge
Ultra low effective capacitances
相關連結
- Infineon CoolMOS^TM Type N-Channel MOSFET 800 V Enhancement, 3-Pin PG-TO220-3 SPP06N80C3XKSA1
- Infineon CoolMOS^TM Type N-Channel MOSFET 800 V, 3-Pin PG-TO-247
- Infineon CoolMOS^TM Type N-Channel MOSFET 800 V, 3-Pin PG-TO-247 SPW55N80C3FKSA1
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SPP06N80C3XKSA1
- Infineon CoolMOS^TM MOSFET 800 V, 3-Pin TO-220
- Infineon CoolMOS^TM MOSFET 800 V, 3-Pin TO-220 SPA11N80C3XKSA2
- Infineon CoolMOSTM 800V Type N-Channel MOSFET 800 V, 3-Pin PG-TO220-3
- Infineon IKA15N60TXKSA1 IGBT PG-TO220-3