Infineon OptiMOSa5 Type N-Channel MOSFET, 100 A, 100 V Enhancement, 3-Pin PG-TO220-3 IPP039N10N5AKSA1
- RS庫存編號:
- 273-3017
- 製造零件編號:
- IPP039N10N5AKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD2,875.00
(不含稅)
TWD3,019.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 350 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD57.50 | TWD2,875.00 |
| 100 + | TWD56.40 | TWD2,820.00 |
* 參考價格
- RS庫存編號:
- 273-3017
- 製造零件編號:
- IPP039N10N5AKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOSa5 | |
| Package Type | PG-TO220-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOSa5 | ||
Package Type PG-TO220-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Automotive Standard No | ||
The Infineon power MOSFET in a TO-220 package ideal for high frequency switching and synchronous rectification applications.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
相關連結
- Infineon OptiMOSa5 Type N-Channel MOSFET 100 V Enhancement, 3-Pin PG-TO220-3
- Infineon OptiMOSa5 Type N-Channel MOSFET 150 V Enhancement, 3-Pin PG-TO262-3
- Infineon OptiMOSa5 Type N-Channel MOSFET 150 V Enhancement, 3-Pin PG-TO262-3 IPI076N15N5AKSA1
- Infineon IPP65R190CFD7A Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1
- Infineon IPP65R190CFD7A Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO220-3 IPP65R190CFD7AAKSA1
- Infineon IPP Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1