Infineon IPP Type N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1
- RS庫存編號:
- 273-3019
- 製造零件編號:
- IPP65R060CFD7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD5,495.00
(不含稅)
TWD5,770.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 400 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD109.90 | TWD5,495.00 |
| 100 + | TWD107.70 | TWD5,385.00 |
* 參考價格
- RS庫存編號:
- 273-3019
- 製造零件編號:
- IPP65R060CFD7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36.23A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PG-TO220-3 | |
| Series | IPP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 171W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, RoHS | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36.23A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PG-TO220-3 | ||
Series IPP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 171W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, RoHS | ||
The Infineon 650V cool MOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar and EV charging stations, in which it enables significant efficiency improvement
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
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