Infineon IPP Type N-Channel Power Transistor, 136 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP069N20NM6AKSA1
- RS庫存編號:
- 349-410
- 製造零件編號:
- IPP069N20NM6AKSA1
- 製造商:
- Infineon
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TWD339.00
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- RS庫存編號:
- 349-410
- 製造零件編號:
- IPP069N20NM6AKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 136A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IPP | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, J-STD-020 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 136A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IPP | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, RoHS, J-STD-020 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon IPP Series Power Transistor, 200V Maximum Drain Source Voltage, 136A Maximum Continuous Drain Current - IPP069N20NM6AKSA1
This power transistor is a high-current N-channel enhancement MOSFET designed for power switching and conversion duties in through-hole assemblies. It operates over a wide temperature span and is intended for applications requiring substantial continuous drain current and elevated voltage handling, housed in a PG-TO220-3 package for straightforward mounting.
Features and Benefits:
• 200V drain voltage enables high-voltage switching tasks
• 136A continuous drain current supports heavy load operation
• 6.9mΩ Rds(on) minimises conduction losses under load
• 300W power dissipation allows sustained high-power use
• 73nC typical gate charge reduces switching transition energy
• 1V forward voltage lowers diode conduction drop
• 136A continuous drain current supports heavy load operation
• 6.9mΩ Rds(on) minimises conduction losses under load
• 300W power dissipation allows sustained high-power use
• 73nC typical gate charge reduces switching transition energy
• 1V forward voltage lowers diode conduction drop
Applications
• Suitable for high-power motor drive stages
• Ideal for industrial power supplies and inverters
• Used with battery management systems for high-current paths
• Can be used for server and telecoms power regulation
• Suitable for audio amplifier output stages requiring high current
• Ideal for industrial power supplies and inverters
• Used with battery management systems for high-current paths
• Can be used for server and telecoms power regulation
• Suitable for audio amplifier output stages requiring high current
What gate drive considerations are necessary for fast switching?
The gate can tolerate up to 20V
design the driver to supply sufficient peak current to charge the 73nC gate quickly while observing the maximum Vgs limit.
How does temperature range affect placement on a heatsink?
With an operating range from -55°C to 175°C, thermal interface selection and heatsink sizing must account for the 300W dissipation and intended ambient conditions.
What mounting method is required for PCB assembly?
The component is configured for through-hole mounting in a PG-TO220-3 package, enabling secure mechanical attachment and effective thermal coupling to external sinks.
Are there limitations on reverse conduction behaviour?
The device exhibits a forward diode characteristic with approximately 1V drop
circuit design should account for this during synchronous or body-diode conduction events.
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