Infineon IPP Type N-Channel Power Transistor, 136 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP069N20NM6AKSA1

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RS庫存編號:
349-410
製造零件編號:
IPP069N20NM6AKSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

136A

Maximum Drain Source Voltage Vds

200V

Series

IPP

Package Type

PG-TO220-3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, RoHS, J-STD-020

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed to deliver high efficiency in power applications. Key features include very low on-resistance (RDS(on)), which minimizes conduction losses, and an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts very low reverse recovery charge (Qrr), enhancing efficiency and reducing switching losses. The device is equipped with a high avalanche energy rating, making it suitable for demanding conditions, and can operate at a high temperature of 175°C, ensuring reliability even in harsh environments.

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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