Infineon IPW Type N-Channel MOSFET, 50 A, 650 V, 3-Pin TO-247
- RS庫存編號:
- 258-3914
- 製造零件編號:
- IPW65R041CFD7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD4,779.00
(不含稅)
TWD5,017.80
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD159.30 | TWD4,779.00 |
| 60 - 60 | TWD156.10 | TWD4,683.00 |
| 90 + | TWD153.00 | TWD4,590.00 |
* 參考價格
- RS庫存編號:
- 258-3914
- 製造零件編號:
- IPW65R041CFD7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPW | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPW | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
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